Silicon-on-Insulator (SOI) and GaN Hardware for Stratospheric Environments
Component hardening against heavy-ion latch-up and cumulative total ionizing dose (TID).
Triple-Modular Redundancy in Digital Basebands
Majority voting logic across internal registers prevents single-event upsets (SEU) from corrupting active packet buffers.
Wide-Bandgap Gallium Nitride (GaN) Power Amplifiers
Delivering high linearity and thermal stability under low atmospheric pressure and extreme temperature swings (-55°C to +125°C).
- Total Ionizing Dose (TID) immunity beyond 100 krad.
- Single Event Latch-up (SEL) free operation.
- Thermally stabilized wide-bandgap GaN PAs.
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